NSN 5962-01-262-7123 Parts of Microcircuit Memory
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| Alternative NSN: 5962-01-262-7123 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012627123 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Raytheon Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| AM25LS2521 B2A | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 5962-86713012A | dla land and maritime | microcircuit memory | Avl | RFQ |
| G104663-822 | raytheon company | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012627123
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.350 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.350 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.100 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 700.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND BIPOLAR |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 17 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | C-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT,DIGITAL, BIPOLAR, 8-BIT EQUAL TO COMPARATOR, MONOLITHHIC SILICON |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 LEADLESS |
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