NSN 5962-01-191-3736 Parts of Microcircuit Memory
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| Alternative NSN: 5962-01-191-3736 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011913736 |
| NCB Code: USA (01) |
| Manufacturers: Datum Inc , Honeywell International Inc , National Semiconductor Corp , Thales Communications Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| DT1034 | datum inc | microcircuit memory | Avl | RFQ |
| 6405561-1 | honeywell international inc | microcircuit memory | Avl | RFQ |
| NMC27C16 | national semiconductor corp | microcircuit memory | Avl | RFQ |
| 652664 | thales communications ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011913736
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.600 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.160 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
| AFGA | OPERATING TEMP RANGE | +0.0 TO 70.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HIGH SPEED AND W/TRANSPARENT LID AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE AND LOW POWER |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CRHL | BIT QUANTITY | 16384 |
| CSWJ | WORD QUANTITY | 2048 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 26.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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