NSN 5962-01-184-1162 Parts of Microcircuit Memory
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Alternative NSN: 5962-01-184-1162 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011841162 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Mmi Amd , National Semiconductor Corp |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
PAL14H4 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 060 | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8103503BRX | dla land and maritime | microcircuit memory | Avl | RFQ |
8103503RB | dla land and maritime | microcircuit memory | Avl | RFQ |
81035 | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8103503BRB | dla land and maritime | microcircuit memory | Avl | RFQ |
PAL14H4MJ | mmi amd | microcircuit memory | Avl | RFQ |
14H4 | mmi amd | microcircuit memory | Avl | RFQ |
PAL14H4 | mmi amd | microcircuit memory | Avl | RFQ |
PAL14H4MJ 883B | mmi amd | microcircuit memory | Avl | RFQ |
PAL14H4MJ | national semiconductor corp | microcircuit memory | Avl | RFQ |
DMPAL14H4MJ 883B | national semiconductor corp | microcircuit memory | Avl | RFQ |
DMPAL14H4J | national semiconductor corp | microcircuit memory | Avl | RFQ |
DMPAL14H4J 883 | national semiconductor corp | microcircuit memory | Avl | RFQ |
PAL14H4MJ 883B | national semiconductor corp | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011841162
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND HERMETICALLY SEALED |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
CQZP | INPUT CIRCUIT PATTERN | 28 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT SINK |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | PAL |
TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/503 GOVERNMENT SPECIFICATION |
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