NSN 5962-01-050-6918 Parts of Microcircuit Memory
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| Alternative NSN: 5962-01-050-6918 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010506918 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration Inc , Dla Land And Maritime , Intel , Intersil Corporation , Intersil Inc , Mmi Amd , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 7013655P006 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 021 | dla land and maritime | microcircuit memory | Avl | RFQ |
| C3301A | intel | microcircuit memory | Avl | RFQ |
| 7013655P006 | intel | microcircuit memory | Avl | RFQ |
| HPROM1-1024A-5 | intersil corporation | microcircuit memory | Avl | RFQ |
| HM1-7610-8 | intersil corporation | microcircuit memory | Avl | RFQ |
| 7013655P006 | intersil corporation | microcircuit memory | Avl | RFQ |
| 7013655P006 | intersil inc | microcircuit memory | Avl | RFQ |
| IM5603CDE | intersil inc | microcircuit memory | Avl | RFQ |
| 7013655P006 | mmi amd | microcircuit memory | Avl | RFQ |
| MM6200-1J | mmi amd | microcircuit memory | Avl | RFQ |
| SN74187J | texas instruments incorporated | microcircuit memory | Avl | RFQ |
| 7013655P006 | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010506918
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 750 INCHES MINIMUM AND 0 795 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 245 INCHES MINIMUM AND 0 300 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 120 INCHES MINIMUM AND 0 195 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING657 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND WENABLE AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND WOPEN COLLECTOR AND SCHOTTKY AND BIPOLAR AND WBUFFERED OUTPUT AND WDECODED OUTPUT AND EXPANDABLE AND WDISABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORMO-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC75 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT94117-7013655 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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