NSN 5962-01-123-4782 Parts of Microcircuit Memory
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| Alternative NSN: 5962-01-123-4782 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011234782 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Fairchild Semiconductor Ltd , Intersil Corporation , Mmi Amd , Raytheon Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 932883-392 | raytheon company | microcircuit memory | Avl | RFQ |
| 18534 | mmi amd | microcircuit memory | Avl | RFQ |
| SD948 | mmi amd | microcircuit memory | Avl | RFQ |
| MM5353 | mmi amd | microcircuit memory | Avl | RFQ |
| 53S441-F | mmi amd | microcircuit memory | Avl | RFQ |
| 5353-1F | mmi amd | microcircuit memory | Avl | RFQ |
| B1614-1B | intersil corporation | microcircuit memory | Avl | RFQ |
| HM7643 | intersil corporation | microcircuit memory | Avl | RFQ |
| B2052-392 | intersil corporation | microcircuit memory | Avl | RFQ |
| HM9-7643-B2052-392 | intersil corporation | microcircuit memory | Avl | RFQ |
| HR10733 | fairchild semiconductor ltd | microcircuit memory | Avl | RFQ |
| HL42543 | fairchild semiconductor ltd | microcircuit memory | Avl | RFQ |
| 93453 | fairchild semiconductor ltd | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 017 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 27S33 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| DH75699 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011234782
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.090 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 175.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | GLASS AND METAL |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER OR GOLD |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| PMLC | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACE GOLD |
| PRMT | PRECIOUS MATERIAL | GOLD |
| TEST | TEST DATA DOCUMENT | 82577-932883 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 FLAT LEADS |
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