NSN 5961-01-338-0675 Parts of Semiconductor Devic
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| Alternative NSN: 5961-01-338-0675 |
| Item Name: Semiconductor Devic |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 013380675 |
| NCB Code: USA (01) |
| Manufacturers: Avago Technologies Us Inc , Cobham Electronic Systems Inc , Compensated Devices Inc , Fei Microwave Inc , Frequency Electronics Inc , Hewlett Packard Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| QSCH-1459 | avago technologies us inc | semiconductor devic | Avl | RFQ |
| 4E598 | cobham electronic systems inc | semiconductor devic | Avl | RFQ |
| DSB 1037 | compensated devices inc | semiconductor devic | Avl | RFQ |
| A2X2033 | fei microwave inc | semiconductor devic | Avl | RFQ |
| A2X2033 | frequency electronics inc | semiconductor devic | Avl | RFQ |
| QSCH-1459 | hewlett packard inc | semiconductor devic | Avl | RFQ |
Characteristics Data of NSN 5961013380675
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| ABHP | OVERALL LENGTH | 0.150 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| ADAV | OVERALL DIAMETER | 0.068 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| AGAV | END ITEM IDENTIFICATION | 5895-01-177-0791 RECEIVER-TRANSMITTER |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| ASCQ | INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| ASDD | COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| ASKA | COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| AXGY | MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| BBJD | FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
| CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| TEST | TEST DATA DOCUMENT | 80063-A3006760 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE AND 1.500 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
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