NSN 5961-00-126-1641 Parts of Transistor
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Alternative NSN: 5961-00-126-1641 |
Item Name: Transistor |
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
NIIN: 001261641 |
NCB Code: USA (00) |
Manufacturers: Adelco Elektronik Gmbh , Alcatel Lucent France , Bunker Ramo Corp , Digitec Inc , Electronic Industries Inc , Fairchild Semiconductor Ltd , Freescale Semiconductor Inc , Hensoldt Sensors Gmbh , Joint Electron Device Engineering , National Semiconductor Corp , On Semiconductor , Sensor Systems L L C , Standard Memories Inc , Tekelec Systemes , Thales Sa |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
2N2894AA | adelco elektronik gmbh | transistor | Avl | RFQ |
007676003 | alcatel lucent france | transistor | Avl | RFQ |
2N2894A | bunker ramo corp | transistor | Avl | RFQ |
10001190 | digitec inc | transistor | Avl | RFQ |
RELEASE5225 | electronic industries inc | transistor | Avl | RFQ |
2N2894A | electronic industries inc | transistor | Avl | RFQ |
2N2894A | fairchild semiconductor ltd | transistor | Avl | RFQ |
2N2894A | freescale semiconductor inc | transistor | Avl | RFQ |
2N2894 | freescale semiconductor inc | transistor | Avl | RFQ |
W41294B6100A13 | hensoldt sensors gmbh | transistor | Avl | RFQ |
2N2894A | joint electron device engineering | transistor | Avl | RFQ |
2N2894 | national semiconductor corp | transistor | Avl | RFQ |
2N2894A | on semiconductor | transistor | Avl | RFQ |
2N2894A | sensor systems l l c | transistor | Avl | RFQ |
SC2147-001 | standard memories inc | transistor | Avl | RFQ |
18904Y | tekelec systemes | transistor | Avl | RFQ |
99062466 | thales sa | transistor | Avl | RFQ |
Characteristics Data of NSN 5961001261641
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | METAL |
ABHP | OVERALL LENGTH | 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 10.00 MICROAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT PRESET |
CTRD | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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